Abstract
The effects of electrical stress on the leakage current of polycrystalline Si (poly-Si) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) were investigated. It was found that the leakage current of MILC TFTs could be reduced by electrical stress ( V G<0, V D>0) and this effect was saturated in about 1000 s. In addition, asymmetric Ni-offset deposition is proposed. By this method, the boundary where the two MILC regions meet can be moved out of the channel region, consequently, resulting in a great reduction in leakage current and in an insensibility to electrical stress.
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