The Effect of Bath Condition on the Composition of Si Thin Films Electrodeposited in Non-Aqueous Solvents

Abstract

Si thin films are attracted as materials for ultra-large-scale solar cell systems at relatively low cost. Electrodeposition is expected as one fabrication method of Si thin films due to its advantages such as relatively simplicity process, precision control of nanostructure and continuous deposition in large area. Si thin films have been electrodeposited in non-aqueous solvents owing to their large electrochemical windows which allows for the study of Si electrodeposition [1-3]. Among various non-aqueous solvents, organic solvents and ionic liquids, which can be used under low temperature, have been used as electrolytes for the electrodeposition of Si thin films in our laboratory. We have previously succeeded to electrodeposit Si thin films in organic solvents and ionic liquids [4-6]. However, there is a problem for applications to solar cells that some impurities (mainly carbon and oxygen) are incorporated in thin films. We have reported the carbon content can be reduced by annealing treatment [7]. On the other hand, the decrease of oxygen content is still required. Thus, we evaluate the composition of Si thin films electrodeposited in an organic solvent and an ionic liquid without oxygen atoms in order to analysis the effect of bath conditions on the composition of thin films (especially, where the oxygen incorporated in Si thin films comes from). Si thin films were electrodeposited with 3 electrode cell (W.E. : Au, R.E. : Ag/Ag+, C.E. : Pt) in acetonitrile, 0.3 M tetrabutylammonium chloride and 0.5 M SiCl4 was used as an organic solvent, and 1-butyl-3-methylimidazolium hexafluorophosphate and 0.5 M SiCl4 as an ionic liquid. The composition of Si thin films were evaluated by X-ray photoelectron spectroscopy. As a result, the oxygen content in Si thin films were decreased by using the solvents without oxygen atoms in both organic solvent and ionic liquid cases. This results suggest that the reason the oxygen inclusion is derived from the incorporation of solvents themselves in films during electrodeposition, and propose us the way to obtain films with low impurities. In addition, the rotating disk electrode was used in the organic solvent case in order to promote the convection. The usage of this rotating disk electrode showed the decrease of impurities in Si thin films. Therefore, it is indicated that the stable supply of SiCl4 to the electrode surface is important factor to obtain films with low impurities. This study reveals that bath condition significantly affects to the composition of Si thin films, and could help us to fabricate films for applications to solar cells. This study was financially supported in part by the Japan Science and Technology Agency (JST) CREST program, and Y. T. acknowledges the Leading Graduate Program in Science and Engineering, Waseda University, from MEXT, Japan. [1] S. Zein El Abedin, N. Borrissenko, F. Endres, Electrochem. Comm., 6 (2004) 510. [2] T. Munisamy, A. J. Bard, Electrochim. Acta, 55 (2010) 3797. [3] M. Bechelany, J. Elias, P. Brodard, J. Michler, L. Philippe, Thin Solid Films 520 (2012) 1895. [4] Y. Nishimura and Y. Fukunaka, Electrochim. Acta, 53 (2007) 111. [5] T. Homma, J. Komadina, Y. Nakano, T. Ouchi, T. Akiyoshi, Y. Ishibashi, Y. Nishimura, T. Nishida, and Y. Fukunaka, Electrochem. Soc. Trans., 41 (2012) 9. [6] J. Komadina, T. Akiyoshi, Y. Ishibashi, Y. Fukunaka, T. Homma, Electrochim. Acta, 100 (2013) 236. [7] Y. Tsuyuki, A. Pham, J. Komadina, Y. Fukunaka, T. Homma, Electrochim. Acta, 183 (2015) 49.