Photoluminescence properties of ZnSe/SiO 2 composite thin films prepared by sol-gel method

Abstract

ZnSe/SiO 2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO 2 composite thin films is sphalerite (cubic ZnS). Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO 2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO 2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO 2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO 2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm (2.5 eV) is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal(2.58 eV). The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.