Abstract
In order to improve the discharge characteristics such as discharge voltage, luminance, luminous efficacy, high-temperature misfiring, and lifetime, a small amount of Si was added to the MgO protective layer of a plasma display panel. The MgO protective layers were deposited by using an electron-beam evaporation method. The addition of Si onto a MgO protective layer can effectively increase the secondary electron emission coefficient so as to improve the discharge characteristics compared with using a pure MgO film. Both the surface characteristics of the protective layer and the electro-optical properties of 4in. test panels were investigated, such as the discharge voltage, luminance, luminous efficacy, high-temperature misfiring, and lifetime. The results show that Si doping of 0.03%–0.04% in MgO has the best performance on plasma display panels.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
