Abstract
In order to improve the discharge characteristics of MgO protective layer, SiO 2 was added to MgO thin films. The MgO–SiO 2 thin films were deposited by electron beam evaporation method. The crystallinity and surface roughness of thin films were determined by XRD and AFM. Discharge characteristics of MgO–SiO 2 protective layers were observed by changes in discharging voltages and SEE and memory coefficients as a function of Si concentration in the protective layer. The discharge characteristics of MgO–SiO 2 layer were mainly affected by changes in crystallinity and surface roughness of films with Si concentration in the range of present study. With addition of 12.5 Si at.% in MgO–SiO 2 protective layer, the discharge voltages and memory and SEE coefficients were considerably improved in comparison to pure MgO protective layer.
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