Abstract
AbstractIn order to improve the discharge characteristics such as discharge voltage, luminance, luminous efficacy, temperature dependence of misfiring, a small amount of Si was added to the MgO protective layer of an alternating current plasma display panel (AC‐PDP). The effect of Si‐doping on a MgO protective layer was reported that it reduces the firing voltage and improved electro‐optical characteristics of AC‐PDP due to the increase of the secondary electron emission with Si concentration. In this study, it was observed that Si‐doping on MgO protective layer reduces the temperature dependence of misfiring compared with a pure MgO film. The effects of Si concentration are reported on the surface‐discharge characteristics of an AC‐PDP.
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