Abstract
A theory is presented for the diffusion coefficients of electrons in a single valley or multivalley semiconductor in a high electric field. The valleys may be isotropic or anisotropic and the coefficients describe diffusion transverse and longitudinal to the field. Generalized Einstein relations are found for a single valley semiconductor and for transverse diffusion in a semiconductor with two types of isotropic valleys. The general method is applied to gallium arsenide and silicon.
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