Abstract
Metal–insulator transition in doped semiconductors is investigated in the presence of intense magnetic fields. Using Thomas–Fermi screening function and a screened coulomb potential in the Hamiltonian, a two-parameter varitional calculation leads to metallization. The correlation effect among the electrons is considered through an effectivemass that depends on the spatial seperation between impurities. Results are provided for a many valley semiconductor (Si) and two single valley semiconductors (GaAs and CdTe). Our results show that in a magnetic field the critical concentration at which metallization occurs increases. The correlation effects bring out one order change in the critical concentration values, in intense magnetic fields.
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