Abstract
Metal–insulator transition in doped semiconductors in strong magnetic fields is a topic of recent interest as metal–insulator transition is a precursor to superconductivity. It is shown that the original Mott criterion is modified to = 0.36 (1 + γ), where is the number of conduction band valleys in the semiconductor and γ is a dimensional parameter, γ = ħωc /2R*. The new criterion is arrived at after solving the donor problem variationally within the effective mass approximation using the Thomas–Fermi screening function.
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