Simulation of electron motion in a single valley semiconductor: GaAs

Abstract

Simulation of electron motion in single valley semiconductors such as GaAs using the Monte Carlo method is analyzed, with confirmation of earlier theoretical work and the Gunn effect in the semiconductor. The actual system can be considered as a quasi system of independent particles. Threshold field is rather insensitive to temperature change. Mean energy increases with field. Time of flight between two virtual scattering processes is large. The total change in k-space and E-space position is linear.