Abstract
The subthreshold technique was used to study irradiated MOS transistors at 80 K. Stretchout of the subthreshold curve demonstrated production of lateral nonuniformities (LNUs) in the hole distribution. The LNUs were analyzed in terms of a parallel transistor model and the statistics of the nonuniform distribution of dose deposition in the SiO/sub 2/. The results confirm the hypothesis that at 80 K the principal source of LNUs is the granularity in dose deposition. The relative standard deviation for the deposited dose is large for thin oxides, for 10 keV X-rays (as opposed to Co-60), and at low doses. These physical phenomena are predicted to have a significant effect at room temperature. >
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