Abstract
The high-frequency Terman's method for interface-trap-density (D it) extraction is used to examine the lateral nonuniformity (LNU) of effective oxide charges in MOS capacitors. The two-parallel-subcapacitor model is constructed to simulate LNU charges, and it was shown that the value of the found effective Dit appears negative as the LNU occurs in the gate oxide. This technique was first used to examine the effective oxide charge distribution in Al2O3 high-k gate dielectrics prepared by anodic oxidation and nitric-acid oxidation. It was found that the LNU effect in Al2O3 is sensitive to oxidation mechanisms and can be avoided by using an appropriate oxidation process. The proposed technique is useful for the preparation and reliability improvement of high-k gate dielectrics
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