The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

Abstract

The electronic and interface state density distribution properties obtained from current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of Au/n-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. SBD parameters such as ideality factor ( n), series resistance ( R S) and barrier height ( Φ IV ) were obtained from I– V and C– V measurements using Cheung's method. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.51–1.78, 7.597–8.167 Ω and 0.88–1.14 eV, respectively. The diode shows non-ideal I– V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I– V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor.