Abstract
We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (Fbo) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The Fbo and the series resistance (RS) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density (NSS) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density NSS as determined by Terman's method is found to be 2.14´10 12 cm -2 eV -1 for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
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