Abstract
In this paper, the design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed is proposed. The proposed ESD protection circuit is verified by the transmission line pulse system. The results show that the novel BiCMOS ESD protection circuit has lower trigger voltage of 5.98 V compared with that of conventional GGNMOS. And this ESD protection circuit has faster turn-on time of about 37ns than that of the conventional substrate-triggered ESD protection circuit. Also, the ESD protection circuit pass the ESD of HBM 3.2kV and MM 210 V.
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