Abstract
This paper proposed whole-chip all-directional ESD protection circuit design with RC LIGBT-based 12 V Power clamp and SCR-based 12 V I/O Clamp. The proposed ESD protection circuit is fabricated using a $0.18 \mu\mathrm{m}$ Bipolar-CMOS-DMOS (BCD) process. To analysis electrical properties and robustness was analyzed by TLP (Transmission Line Pulse) system, and with an ESD pulse generator. The results of the measurement indicate that in the case of the RC LIGBT power clamp for HBM 8 kV and MM 800V in stress mode DS (VDD to VSS). Additionally, SCR-based ESD protection circuit for I/O can discharge ESD current in four stress mode (PD: positive - VDD, ND: negative -VDD, PS: positive -VSS, NS: negative -VSS) with superior characteristics for HBM 8kV, MM 800V.
Published Version
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