Abstract
The effect of surface recombination on PIN diodes is studied by means of numerical modelling, which takes into account the fundamental equations, including those which ensure that the end regions are equipotential. The diodes cross section is assumed to be circular, and the recombination in the end regions is neglected. Most of the results refer to infinite surface recombination. The values of the effective lifetimes and of the “offset voltage” are obtained over a wide range of base widths and cross section radii. The results are fitted by analytical expressions. It is found that the effect of surfaces is appreciable even for diodes with radii as large as 10–30 diffusion lengths. The narrower the base-width w, the stronger is the effect of surface recombination in reducing the effective lifetime. The “offset voltage” increases with base-width, going from negative to positive values and passing through zero for w ≈ 1.6L (L = ambipolar diffusion constant).
Published Version
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