Abstract
The effect of modulation frequency and surface recombination on the characteristics of an ion-implanted GaAs OPFET is determined analytically. The drain-source current is found to decrease with the increase in both modulation frequency and trap center density. The current changes significantly with the trap center density only when the latter is greater than 10/sup 20//m/sup 2/. The threshold voltage does not change appreciably with the modulation frequency as in a silicon OPFET. However, the increased in the trap center density causes V/sub T/ to increase in the enhancement device and decrease in the depletion device. Further, V/sub T/ increases under the normally ON condition and decreases under the normally OFF condition with an increase in the photon absorption coefficient in GaAs. Some anomalous behavior is observed for higher values of the absorption coefficient. >
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