Abstract
The results of the quantitative X-ray electron spectroscopy and Auger electron spectroscopy of lead chalcogenide layers obtained by the hot wall technique are presented in this paper. The initial compounds PbTe, PbS, PbSe, PbS 1 − x Se x , PbSe 1 − x Te x and Pb 1 − x Sn x Te were brought to P min by the method of continuous and multiple sublimation-crystallization at the evaporation temperature. The layers were grown by congruent sublimation. The composition of the resulting layers was identical to that of the initial material. Single-crystal samples on BaF 2 supports showed structural perfection and compositional homogeneity across the layer. After sensitizing, polycrystalline films of PbS abd PbS x Se 1 − x on photoglass supports displayed a non-homogeneous distribution of the elements across the near-surface layer. The films that contained a larger amount of lead in the near-surface layer and had a better developed relief of the elemental distribution across the layer exhibited greater photosensitivity.
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