Abstract
In this paper, we report on the influence of molecular beam epitaxial (MBE) growth temperature on the spectral response of the long-wavelength infrared radiation (LWIR), three-stage thermoelectrically (TE) cooled (T = 210, 230 K) InAs/InAsSb type-II superlattice (T2SL)-based detectors grown on the GaSb/GaAs buffer layers/substrates. Likewise, antimony (Sb) composition and the superlattice (SL) period could be used for spectral response selection. The presented results indicate that the growth temperature affects the 50% cut-off (λ50%cut-off) of the fabricated devices and could be used for operating wavelength tunning. Assuming constant Sb composition and T2SL period during MBE process, the growth temperature is presented to influence λ50%cut-off covering entire LWIR (e.g., temperature growth change within the range of 400–450 °C contributes to the λ50%cut-off ~ 11.6–8.3 μm estimated for operating temperature, T = 230 K). An increase in temperature growth makes a blueshift of the λ50%cut-off, and this is postulated to be a consequence of a modification of the SL interfaces. These results show an approach to the T2SL InAs/InAsSb deposition optimization by the growth temperature in terms of the spectral response, without influencing the T2SLs’ structural properties (Sb composition, SL period).
Highlights
Long-wavelength infrared radiation (LWIR; 8–12 μm) is still one of the most exploited spectral ranges for military, spectroscopy, gas sensing, or meteorology applications [1,2].Nowadays, due to the improvement of epitaxial techniques, especially molecular beam epitaxy (MBE), the superlattice (SL) concept presented by Esaki and Tsu in 1970 has presented itself as a potential candidate to supersede HgCdTe [3].SL detectors made of III-V materials have stronger covalent bonds than HgCdTe, which results in a higher operating temperature range and better material uniformity [4]
Omitting the problem connected with the temperature measurements inside the chamber, it is commonly known that the growth temperature (Tgrowth ) mainly influences crystal quality
InAs/InAsSb detectors optimized for the LWIR range were investigated with afocus particular growth temperature, in order to show the cut-off wavelength range tunning for focus on the growth temperature, in order to show the cut-off wavelength range tunning for LWIR
Summary
Long-wavelength infrared radiation (LWIR; 8–12 μm) is still one of the most exploited spectral ranges for military, spectroscopy, gas sensing, or meteorology applications [1,2]. The structure is designed to be lattice matched to GaSb substrate or GaSb buffer layer/GaAs substrate. In real T2SL, T2SL,ititis is hard to obtain defect-free interfaces, especially a thin layer islayer utilized This requires growth growth interruptions and necessitates soaking soaking time between. Thecomposition potential composition changes at the interfaces are These interface issues are directly responsible for discrepancies between a theoretical hard to predict. T2SLs, T2SLs, which gives in detector’s designing procedure without λInAs/InAsSb. 50%cut-off InAs/InAsSb whichflexibility gives flexibility in detector’s designing procedure influencing any SL structural parameters. InAs/InAsSb detectors optimized for the LWIR range were investigated with afocus particular growth temperature, in order to show the cut-off wavelength range tunning for LWIR. Focus on the growth temperature, in order to show the cut-off wavelength range tunning for LWIR
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