The density of localized states at the semi-insulating polycrystalline and single-crystal silicon interface

Abstract

The density of localized states at the interface between as-deposited 51 at. % semi-insulating polycrystalline silicon and silicon has been measured using the conductance technique. Aluminum-gated metal-insulator-semiconductor structures were made on n-n+ and p-p+ epilayered silicon and full details of capacitance-voltage and conductance-voltage characteristics are given. The interface state response is shown to fit the statistical model and comparisons with the Si-SiO2 interface were made. The density of states is found to be between ∼6×1010 cm−2 eV−1 near midgap rising to ∼6×1011 cm−2 eV−1 at the band edges.