Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices

Abstract

Preface Introduction (J F Nijs). Single Crystalline Silicon and its Alloys: Heavy doping effects in Silicon (P/Van Mieghem and R P Mertens): Introduction The physics of heavy doping effects Brief review of heavy doping effects Theories and models Influence of HDE on Silicon devices Summary References. Defects in crystalline silicon (C Claeys and J Vanhellemont): Introduction Structure of lattice defects Electronic properties of defects Device processing related defects Metallic contamination and gettering Impact on device properties References.Molecular beam epitaxy of silicon, silicon alloys and metals (E Kasper and C M Falco: introduction Electron beam evaporators and metals MBE Silicon Molecular beam epitaxy (Si-MBE) Applications of Silicon MBE References. Low thermal budget chemical vapour deposition techniques for Si and SiGe (M R Caymax and W Y Leong): Introduction Prerequisites for low-temperature growth Growth systems Kinetics of CVD growth of Si and SiGe in SiH^O 4/GeH^O4 systems Doping of low temperature Si and Si^O1-xGe^Ox layers Selective epitaxial growth (SEG) of Si and SiGe ^IIn-situ and ^Iex-situ characterisation References. Materials properties of (strained) SiGe layers (J Poortmans, S C Jain, J Nijs and R Van Overstraeten): Introduction: Structure and stability The Si-strained SiGe band alignments The indirect bandgap of strained Si^O1-xGe^Ox Transport properties and effective density of states in strained Si^O1-xGe^Ox layers References. SiGe heterojunction bipolar applications (J Poortmans, S C Jain and J Nijs): Introduction DC-behaviour of the double heterojunction bipolar transistor Frequency and circuit performance of HBT's with strained Si^O1-xGe^Ox-base Incorporation of strained Si^O1-xGe^Ox-layers in advanced bipolar technologies Conclusions References. Field-effect transistors, infrared detectors, and resonant tunneling devices in silicon/silicon-germanium and ^D*d-doped silicon (M Willander): Introduction Field-effect transistors Infrared detectors Resonant tunneling devices Summary References. Crystalline silicon-carbide and its applications (T Sugii): Introduction Physical properties Crystalline SiC growth Device application Summary References. Part Two: Polycrystalline silicon. Large grain polysilicon substrates for solar cells (S Martinuzzi and S Pizzini) Introduction Growth of polycrystalline (multicrystalline) silicon The role of oxygen, carbon and point defects in polycrystalline silicon Electrical properties of multicrystalline silicon wafers Conclusion References. Properties analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn): Introduction Structural properties and density of states Effect of the DOS on the I-V characteristis Current-voltage characteristics Capacitance voltage characteristics Electric field at the drain and kink effect Conclusions Appendix References. Application and technology of polysilicon thin film transistors for liquid crystal displays (C Baert) Introduction Application of polysilicon thin film transistors Technology of polysilicon thin films Polysilicon TFT device structure Summary References. The use of polycrystalline silicon and its alloys in VLSI applications (M Y Ghannam): Introduction Deposition and structural properties of polysilicon Technological properties of LPCVD polysilicon films Electrical properties of polysilicon VLSI applications of polysilicon Other applications of polysilicon Semi-insulating polycrystalline silicon (SIPOS) Polycrystalline silicon/germanium alloys Biographical details. Keyword index.