Abstract
SIPOS (semi‐insulating polycrystalline silicon) films with 40 atomic percent oxygen have been studied with Auger electron spectroscopy (AES) and photoelectron spectroscopy (PES). The comparison of the Si LVV Auger spectra with the Si 2p lines suggests that the as‐grown SIPOS film contains large amounts of as well as . Annealing at 1100°C causes crystal growth of Si and the change of towards . An additional peak at 83 eV is found in the Si LVV Auger spectra, which has been reported to exist at the interface, and can be attributed to .
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
