Abstract
Bismuth titanate (Bi4Ti3O12) (BTO) thin films were fabricated on an n‐type Si substrate and annealed by rapid thermal annealing methods. The I‐V measurement shows that the device has properties of Schottky diode with the ΦB0 of 0.76 eV, n of 2.42, and leakage current of about 10−7 A at − 8 V. The experimental C‐V‐f and G/w‐V‐f characteristics of metal‐ferroelectric‐insulator‐semiconductor (MFIS) structures show fairly large frequency dispersion especially at low frequencies due to interface states Nss. The energy distribution of (Nss) has been determined by using the high‐low frequency capacitance (CHF− CLF) and conductance method. The relaxation time (τ) of interface states was calculated from the conductance method. It has been shown that both the Nss and relaxation time increase almost exponentially with bias, which activates traps located at deeper gap energies. Copyright © 2011 John Wiley & Sons, Ltd.
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