Preparation and growth of SrBi4Ti4O15 ferroelectric thin film by sol-gel method

Abstract

The stable strontium bismuth titanate (SBTi) precursor solution were prepared us ing strontium chloride, bismuth nitrate, tetrabulyl titranate as raw materials, with citric acid as complex agent, ethylene glycol as cross linker, and ethanol absolute, water, hydrochloric acid as solvents of tetrabulyl titranate, strontiu m chloride, bismuth nitrate, respectively. SBTi thin films with enhanced a-axis orientation were prepared on Pt/Ti/Si02/Si substrates by the Sol-Gel method. Wit h the aid of ESEM and XRD, the effects of annealing time and the number of coati ngs on microstructure crystallization and growth behavior of SBTi thin films wer e investigated. The results indicate that the pyrochlore phase was restrained su ccessfully by layer-by-layer rapid thermal annealing method. The crystallization of the film was enhanced with the increase of coating number. Because of the an isotropic growth of SBTi crystals and the suppressed growth in (119) direction b y the thickness of single-annealed layer, the intensity of (200) and (119) peaks increase with the increase of layers, and the former increase more quickly.Howe ver, the intensity of (00l) peak decreased with the increase of layers, so the r elative intensity of (200) ［I(200)/I(119)，I(200)/I(0010)］ and (119) ［I(119)/ I(0010)］ increases with the increase of layers.