Abstract
The Bi 4Ti 3O 12 (BTO) thin film were fabricated on an n-type Si substrate and annealed by rapid thermal annealing methods. The temperature dependence of capacitance–voltage ( C– V) and conductance–voltage ( G/ ω– V) characteristics of the Au/Bi 4Ti 3O 12/SiO 2/n-Si metal–ferroelectric–insulator–semiconductor (MFIS) structures was investigated by taking the effects of series resistance ( R s) and interface states ( N ss) in the temperature range of 80–400 K. Both the density of interface states N ss and series resistance R s were found to be strongly temperature dependent. It is observed that the C– V and G/ ω– V plots exhibit anomalous peaks at forward bias because of the influences of N ss and R s. It has been experimentally determined that these peak positions shift from accumulation to inversion region, and the maximum values of the capacitance ( C) and conductance ( G) generally increase with temperature. Also, the distribution profile of R s– V shows a peak in the accumulation region. The effect of R s on the C and G is more pronounced in the studied temperature range. The experimental C– V–T and G/ ω– V–T characteristics of MFIS structures show the expected behavior due to N ss in equilibrium with the semiconductor. The temperature dependent C– V and G/ ω– V characteristics confirm that the R s and N ss play an important role and strongly affect the electrical parameters of MFIS structure.
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