Abstract
The density of states (DOS) near the Fermi level is studied for hydrogenated amorphous silicon (a-Si: H) thin films using the space charge limited current technique (SCLC). Experiments using films of different thicknesses show that surface states significantly contribute to the DOS. Investigations of both front and back contacts indicate that the first deposited layers imply DOS higher than the rest of the film. The study also shows that the film characteristics are dominated by the top electrode.
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