C- V curves for an amorphous/crystalline silicon heterojunction: Calculations at the static limit

Abstract

In this paper the dependence of the capacitance value of the n-amorphous/ p-crystalline silicon heterojunction with the amorphous silicon doping level, the density of interface states, the density of amorphous silicon gap states and the amorphous silicon gap is studied. It is found that the capacitance depends strongly on the density of gap states and on the doping level in amorphous silicon. Values of the density of interface states that do not affect the device capacitance were estimated. This heterojunction can be used to obtain information of the amorphous silicon density of gap states parameters.