Abstract
For CuInS 2, a high hole concentration could only be obtained by phosphorus implantation and pulse electron beam annealing and a high electron concentration could be obtained by zinc diffusion. Combining the studies of electrical, photoluminescence and stoichiometric analyses, the compensation mechanisms were revealed. The ionization energy thus obtained is 0.018 eV for phosphorus occupying a sulfur vacancy, and the ionization energy of zinc occupying the copper site is 0.18 eV. A defect model was developed to illustrate the doping effects, and “quantitative” investigations on doping and compensation effects were carried out.
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