Abstract
The low pressure NH/sub 3/-annealing and the H/sub 2/ plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H/sub 2/-plasma had a better passivation effect on the oxynitride. >
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