Abstract
The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 mu m and a channel width W ranging from 20 to 0.5 mu m were fabricated and characterized. The most prominent effect of reducing the TFT channel was found to be a drastic decrease in threshold voltage when W was reduced to less than 5 mu m. This decrease was found to be correlated with the decrease in grain-boundary trap density. >
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