Abstract
The NH/sub 3/-annealing and the H/sub 2/-plasma hydrogenation techniques were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold , voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the better H/sub 2-plasma response on the TFT with the gate oxynitride.
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