Abstract
At the initial stage of 3C-SiC growth on Si(001) using aorganosilicon compound such as monomethylsilane (MMS),Si(001)-c(4 × 4) was formed before the nucleation of SiC islands. From observation of thec(4 × 4) structure by scanning tunnelling microscopy (STM), it was found that bothc(4 × 4) domainsand (2 × 1) domains coexisted. From the estimation of the lattice size forthese structures by line profile measurement, the lattice size of thec(4 × 4) domain was contracted and that of the(2 × 1) domain was expanded.Therefore, the c(4 × 4) domain was considered to be the preferential nucleation site of SiC. The STM observation for thec(4 × 4) structure formed using MMS also revealed that thec(4 × 4) domain consistedof both the α-cell and the β-cell, similar to that formed by silicon deposition and subsequent sample annealing. An STM image ofan α-cell, however, did not show a central spot in the empty state. So, the top dimer of theα-cell is not an Si–Si dimer but another dimer.
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