Abstract
In order to utilise PZT thin films for MEMS applications it is essential to optimise the d 31 coefficient in order to maximise actuation efficiency. The d 31 coefficient, which can be optimised by the poling process, should be different for films of different orientation. PZT thin films of <110>, <100> and <111> have been deposited onto platinised silicon, their d 31 coefficient measured and their effectiveness as microactuators compared and evaluated.
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