Abstract
PZT films were deposited by a sol-gel method on platinized silicon substrates with different types of layer materials, such as silicon nitride and silicon oxide. The crystallographic orientations of the PZT films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was utilized to characterize the mechanical properties of these PZT films. It was observed that (001/100)-oriented films show higher Young's modulus compared with mixed (110) and (111)-oriented films on both SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based and SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based substrates. The influence of substrates on the mechanical properties of PZT thin films was also characterized and the results obtained from PZT thin film with SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based substrate indicated the real orientation effect. Finally, no significant influence of the film thickness was found on the mechanical and electrical properties of films thicker than 200 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
