Abstract
Epitaxial layers of Ga 1− x In x As, Al 1− x In x As and InP have been prepared in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system, using trimethyl group III sources and group V hydrides. The characteristics of the layers have been studied as a function of gas phase composition and growth temperature. Elemental analyses of the layers have been carried out using Auger bevel profiling and secondary ion mass spectrometry (SIMS) sputter profiling. Alloy composition and crystal quality have been studied using X-ray diffraction. The optical properties of the layers have been assessed by photoluminescence and their electrical transport characteristics by C - V measurements, electrochemical profiling and Hall Van der Pauw measurements.
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