Abstract
The III–V compound semiconductor GaAs has been grown on silicon substrates by atmospheric pressure metal organic chemical vapour deposition (APMOCVD) using trimethylgallium (TMGa) and phenylarsine (PAS). The GaAs exhibited high crystalline quality (X-ray rocking curve FWHM 430 arc seconds) and a specular morphology. Electrical properties were poor with an inversion from p- to n-type within the layers. This is attributed to both dislocations present because of the lattice mismatch at the GaAs/Si interface and doping effects due to impurities introduced from the PAS source. Strong emission due to free-exciton transitions may be seen in the photoluminescence spectra of the samples.
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