Abstract
Two experiments are described with the object of determining some of the electronic properties of semiconductor surfaces produced by fracture in high vacuum. In one experiment the photoelectric emission is being measured from freshly broken indium antimonide and gallium arsenide, and from cleaved bismuth telluride. The surfaces are produced and the measurements carried out in sealed-off tubes pumped by ionization gauges. The pressures achieved in these tubes are between 10 −7 and 10 −9mm Hg. In the other experiment, the transverse mobility of induced surface charge and the photoconductivity are being investigated on germanium surfaces obtained by cleavage in a vacuum of order 10 −10 mmHg. This vacuum is obtained in a continuously pumped system with a mercury diffusion pump and ionization gauge. Details of the two kinds of tube will be shown.
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