The Analysis of SEU in Nanowire FETs and Nanosheet FETs

Yunjae Kim,Myounggon Kang

doi:10.3390/electronics10070863

Yunjae Kim, Myounggon Kang

Open Access

https://doi.org/10.3390/electronics10070863

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Journal: Electronics	Publication Date: Apr 5, 2021
Citations: 1	License type: CC BY 4.0

Affiliation: Korea National University of Transportation

Abstract

The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90°, whereas the least occurred at 15°. SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

Highlights

When high-energy radiation is incident on semiconductor circuits, many electron–hole pairs (EHPs) are generated
It was confirmed that the degree of single-event upset (SEU), which is a problem that occurs in environments involving radiation, changes owing to various factors
The nanowire field-effect transistors (NW-FETs) was more vulnerable to SEU than the NS-FET

Summary

Introduction

When high-energy radiation is incident on semiconductor circuits, many electron–hole pairs (EHPs) are generated. These generated EHPs extend the depletion layer and move into the drain. Single-event upset (SEU) is a type of SEE that flips stored data. This can be resolved through a device reboot or data rewriting. There are limitations in measuring the SEU in environments involving space radiation [8,9]. As most radiation effects dissipate rapidly, removing the device from the environment involving radiation affords significant recovery. As NW-FETs and NS-FETs have different channel structures, the effects of SEU on different radiation-exposed areas were compared. In this study, the effect of these parameters on the SEU in NW-FETs and NS-FETs was analyzed in detail

Proposed Structure and Operation

Results

Conclusions