Abstract
The thermoelectricpower, referenced to bulk copper, of thin films of copper about 150 Å thick was measured by preparing a thin film bridge between two copper wires which served as leads. This arrangement produces two junctions between the thin film copper and the bulk copper. The two junctions were maintained at a temperature difference which was measured using a calibrated copper-constantan thermocouple. It was found that the thin film-to-bulk thermoelectric power varies with time and can be fitted to an equation of the form S = S F (1− e -λt) where λ depends on temperature. The constant λ in the equation has values very close to those found from thin film resistance aging measurements, suggesting that the same mechanism is responsible for both aging phenomena. The heated junctions is negative, in agreement with a simple electron diffusion model of thermoelectric power.
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