Abstract
Thermoelectric power and electrical resistivity of thin (<1000 Å) copper films annealed at different temperatures have been studied. The data have been utilized to obtain the contribution to thermoelectric power by the structural defects in the films. This contribution is comparable in magnitude to the bulk value. It increases with film thickness giving rise to a strong thickness dependence of thermoelectric power at thicknesses considerably larger than the mean free path of the conduction electrons.
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