Texturization of Monocrystalline Silicon Wafers with K3PO4 and K2SiO3 Solutions

Abstract

Keywords: monocrystalline silicon; potassium phosphate tribasic; potassium silicate; size; density. Abstract. The pyramid construction was formed with different K3PO4 and K2SiO3 concentrations under different temperatures. The pyramid size, density and uniformity on monocrystalline silicon surface have been studied. We found that the temperature has a crucial influence on pyramid density; the K2SiO3 concentration has a significant influence on pyramid size and density. With the temperature increasing (from 50°C to 90°C), the density varies from 6.91% to 29.45%. The increase in K2SiO3 concentration (from 1wt% to 7wt%) resulted in the reductions of the pyramid size (from 2.37 μm to 1.07 μm ) and density (from 88.9 % to 10.5%). The increase in K3PO4 concentration (from 26% to 62%) resulted in the reductions of the pyramid size (from 2.48 μm to 1.13 μm) and density (from 77.7 % to 43.9%). the pyramid size and density obtained in the optimal etching conditions (62wt% K3PO4, 85°C, and 5 min) are close to 1.13μm and 52.0%. The uniform pyramids are obtained in the conditions (30wt% K3PO4, 2wt% K2SiO3, 90°C, and 5 min), its biggest size of pyramid is 3.12 μm and mean size is 1.00 μm. This technique may be probably used in the texturization process for high-efficiency silicon solar cells.