Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Abstract

Th e pyramid constructio n wa s forme d with differen t K 3PO4 concentrations under differen t tim e and temper atures. The pyramid size, density and uniformity on monocrystalline silicon surface have been studied. We found that the K3PO4 concentrations and temperature has a crucial influe nc e o n pyramid density; th e time has a significant influence on pyramid size. With the time increasing (from 5min to 30min), the size varies from 1.2 t o 3.7μm. The densit y varie s from 0% to 52.2%, wit h th e temperature i ncreasing (from 30℃ to 90℃). The pyramid size and density obtained i n th e optima l K 3PO4 concentrations (30wt% K3PO4, 2wt K2SiO3, 85℃, and 5 min) are close to 1.3μ m and 48 .0%. The uniform pyramids are obtained in the optimal temperatur e (30wt % K 3PO4 , 2wt% K2SiO3 , 90℃ , and 5 min), its biggest size of pyramid is 3.1 μ m and mean size is 1.1μm . Furthermore , the averag e reflectivit y of silicon surfac e has also bee n studied . For th e texture d silicon surface, the averag e reflectivit y obtaine d in the optimal etching conditions (6wt% K3PO4+ 2wt% K2SiO3, 85℃, and 20 min) is clos e to 11.6% . This techniqu e provide s an alternativ e way for production high-efficiency silicon solar cells.