Abstract
In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N2O and O2 treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.
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