Terahertz Response in Schottky Warp-Gate Controlled Single Electron Transistors

Abstract

Schottky wrap-gate controlled GaAs-based single electron transistor (SET) can operate as a high sensitivity terahertz (THz) detector. The reproducible THz photocurrent was observed at low temperature in the device at the normal incidence of CH3OH gas laser with the frequency 2.54 THz. The change of source–drain current induced by THz photon shows that a satellite peak was generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak, which indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretic analysis verify that the narrow spacing of double barriers is more effective for the enhancement of THz response.KeywordsGate VoltageDrain CurrentSatellite PeakResonant Tunneling DiodeSingle Electron TransistorThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.