Abstract
A theoretical study on the rise of photo‐oscillations in the magnetoresistance of hexagonal boron nitride (hBN)‐encapsulated graphene is presented. The previous radiation‐driven electron orbit model devised to study the same oscillations, well‐known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far‐infrared radiation. The power, temperature, and frequency dependences of the photo‐oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero‐resistance states and a resonance peak.
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