Abstract
Scanning electrical probe memory using Ge2Sb2Te5 has been considered as one of the promising contenders for next-generation data storage device, due to its ultra-high capacity, short access time, and low power consumption. Therefore, a numerical model based on classical nucleation-growth theory was developed to simulate the crystallisation behaviour of Ge2Sb2Te5 material in order to help understanding the physics mechanism of scanning electrical probe memory and thus provide the performance improvement. The crystallisation of Ge2Sb2Te5 in this model is first induced by the advent of the nuclei determined by nucleation probability, followed by the subsequent growth relying on the growth velocity. Results obtained from this model are in a good agreement with the experimental counterpart, revealing a potential of storage density of terabit per square inch.
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