Abstract
Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs’ electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.
Highlights
Heavy metals are naturally occurring elements, produced from natural sources such as volcanic eruption, rock weathering, metal corrosion and metal evaporation from soil and water
This review aims to provide an overview of Chem/BioFET sensor studies that have been dedicated to Heavy metal ion (HMI) detection for the past 10 years
Even though the 2DEG carrier mobility is incomparable to mobility of zero-bandgap graphene [178,179], High Electron Mobility Transistor (HEMT) has considerable potential as a highly sensitive sensor device with fast response time attributed to its higher 2DEG density and thinner barrier in the Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) layer, enabling direct detection of molecules or charged particles absorbed on top of its sensing area [180,181]
Summary
Heavy metals are naturally occurring elements, produced from natural sources such as volcanic eruption, rock weathering, metal corrosion and metal evaporation from soil and water. Because the size of the aptamer is smaller than the Debye length (Figure 3d), this allows for binding events to occur within the electrical double layer and yields a high sensitivity sensor response On this basis, Maehashi et al developed an FET sensor functionalized with aptamer for immunoglobulin E (IgE) detection [44]. Lieber et al suggested the use of a biomoleculepermeable polyethylene glycol (PEG) polymer layer on the SiNWs FET sensing area to extend the Debye length in high ionic strength solution [46] They showed the FET sensor device with PEG-modified exhibits real-time detection of prostate specific antigen (PSA) in concentrations as high as 150 mM. Hefofewctesv.er, this method is only applicable to 2‐D materials or thin films that can create ripple effects
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
