Abstract
The structural phase transition (PT) of the Si(113) surface upon varying the temperature has been investigated using synchrotron radiation photoemission spectroscopy (SRPES). It was observed that the Si(113) surface reconstructs to a $3\ifmmode\times\else\texttimes\fi{}2$ phase at room temperature (RT). The $3\ifmmode\times\else\texttimes\fi{}2$ surface was found to transform to $3\ifmmode\times\else\texttimes\fi{}1$ at about 800 K. Our PES results show that the local structure of the $3\ifmmode\times\else\texttimes\fi{}2$ surface at RT is the same as that of the $3\ifmmode\times\else\texttimes\fi{}1$ surface at 800 K. The PT upon raising the temperature can be understood via the thermal fluctuation of two types of tetramer on the $3\ifmmode\times\else\texttimes\fi{}2$ surface. We thus propose that the temperature-induced PT is an order-disorder transition.
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