Abstract
Temperature dependent current transport mechanism in Ni/β-Ga2O3 Schottky Barrier Diodes was studied using current-voltage (I-V) and capacitance-voltage (C-V) characterization techniques in the range of 78–350 K. Schottky barrier height ϕb0 and ideality factor ɳ from I-V characteristics were found to be 1.27 eV and 1.12, respectively, at room temperature. Plots of barrier height and ideality factor with inverse of temperature show strong temperature dependency and a deviation from barrier height obtained from C-V characteristics. The temperature dependence of barrier height and ideality factor assigned to barrier inhomogeneity at Ni/β-Ga2O3 interface, and modulated by the potential fluctuation model. Diode turn-on voltage and turn-on resistance at 300 K were found to be 1.08 eV and 7.80 mΩ-cm2, respectively. A large rectification ratio of the order of 1012 was obtained at room temperature and also the rectification ratio of the order of 109 was consistent over the whole temperature range (78–350 K).
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